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How to Tell if a Photo Has Been Doctored.Nearly every photo online has been edited in some way, whether through cropping, filtering, compressing, color correcting, or other generally innocuous touch ups.But a lot of people attempt to pass off doctored images as true ones, leading to hoaxes, crackpot theories, and more than one trip to Snopes for some fact checking.You can do the world a service by helping those around you identify real photos against fake ones.Heres how Look for Poor Editing First.Glaring mistakes should be the first way you identify a doctored photo.If you think somethings been modified, a helpful tip is to look around the area you believe is edited.Warping around a subject is a pretty clear indication of photo manipulation.Check out hands, feet, and faces, common areas where you may find the lingering presence of poorly erased objects like jewelry, blemishes, or debris.Low resolution images might make mistakes harder to discover, so consider blurry camera photos and video footage with a grain of salt.Lighting is Key. 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Install Digital Climate Control S13 here. Insulated gate bipolar transistor Wikipedia. An insulated gate bipolar transistor IGBT is a three terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. It switches electric power in many applications variable frequency drives VFDs, electric cars, trains, variable speed refrigerators, lamp ballasts, air conditioners and even stereo systems with switching amplifiers. The IGBT is a semiconductor device with four alternating layers P N P N that are controlled by a metal oxide semiconductor MOS gate structure without regenerative action. Since it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex waveforms with pulse width modulation and low pass filters. In switching applications modern devices feature pulse repetition rates well into the ultrasonic rangefrequencies which are at least ten times the highest audio frequency handled by the device when used as an analog audio amplifier. IGBT Comparison Table 1Device Characteristic. Power Bipolar. Power MOSFETIGBTVoltage Rating. High lt 1k. VHigh lt 1k. VVery High 1k. VCurrent Rating. High lt 5. AHigh 5. 00. AHigh 5. 00. ON Semiconductor supplies MOSFET drivers and IGBT drivers for low side, high side, and halfbridge drive circuits. AInput Drive. Current ratio h. FE2. 0 2. 00. Voltage VGS3 1. VVoltage VGE4 8. VInput Impedance. Low. High. High. Output Impedance. Low. Medium. Low. Switching Speed. Slow sFast nsMedium. Cost. Low. Medium. High. HistoryeditThe first generation IGBTs of the 1. Second generation devices were much improved. The current third generation IGBTs are even better, with speed rivaling MOSFETs, and excellent ruggedness and tolerance of overloads. 2 Extremely high pulse ratings of second and third generation devices also make them useful for generating large power pulses in areas including particle and plasma physics, where they are starting to supersede older devices such as thyratrons and triggered spark gaps. High pulse ratings and low prices on the surplus market also make them attractive to the high voltage hobbyists for controlling large amounts of power to drive devices such as solid state Tesla coils and coilguns. Static characteristic of an IGBTThis mode of operation was first proposed by Yamagami in his Japanese patent S4. This mode of operation was first experimentally reported in the lateral four layer device SCR by B. W. Scharf and J. D. Plummer in 1. 97. This mode of operation was also experimentally discovered in vertical device in 1. B. Jayant Baliga. 4 The device structure was referred to as a V groove MOSFET device with the drain region replaced by a p type Anode Region in this paper and subsequently as the insulated gate rectifier IGR,5 the insulated gate transistor IGT,6 the conductivity modulated field effect transistor COMFET7 and bipolar mode MOSFET. 8Plummer filed a patent application for IGBT mode of operation in the four layer device SCR in 1. USP No. 4. 19. 97. B1 Re. 33. 20. 99 was reissued in 1. IGBT mode operation in the four layer device SCR. Hans W. Becke and Carl F. Wheatley invented a similar device for which they filed a patent application in 1. MOSFET with an anode region. 1. This patent has been called the seminal patent of the insulated gate bipolar transistor. 1. The patent claimed no thyristor action occurs under any device operating conditions. This substantially means that the device exhibits non latch up IGBT operation over the entire device operation range. Motor Load Drivers NCV7748 Octal LS LIN Relay Driver. Virtual node concept allows for control of up to 32 relays through LIN Over Current Protection protects. A. Nakagawa et. al. IGBTs in 1. 98. 4. 1. Infineon OptiMOS combines leading MOSFET technology with a robust package to deliver bestinclass performance and outstanding current capacity. The invention1. 3 is characterized by the device design setting the device saturation current below the latch up current, which triggers the parasitic thyristor. This invention realized complete suppression of the parasitic thyristor action because the maximum collector current was limited by the saturation current and never exceeded the latch up current. After the invention of the device design concept of non latch up IGBTs, IGBTs evolved rapidly and the design of non latch up IGBTs became a de facto standard. Device structureedit. Cross section of a typical IGBT showing internal connection of MOSFET and Bipolar Device. An IGBT cell is constructed similarly to a n channel vertical construction power MOSFET except the n drain is replaced with a p collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p region creates a cascade connection of a PNP bipolar junction transistor with the surface n channel MOSFET. Practical deviceseditPractical devices capable of operating over an extended current range were first reported by Baliga et al. A similar paper was also submitted by J. P. Russel et al. to IEEE Electron Device Letter in 1. The applications for the device were initially regarded by the power electronics community to be severely restricted by its slow switching speed and latch up of the parasitic thyristor structure inherent within the device. However, it was demonstrated by Baliga and also by A. M. Goodman et al. This was followed by demonstration of operation of the device at elevated temperatures by Baliga in 1. Successful efforts to suppress the latch up of the parasitic thyristor and the scaling of the voltage rating of the devices at GE allowed the introduction of commercial devices in 1. Complete suppression of the parasitic thyristor action and the resultant non latch up IGBT operation for the entire device operation range was achieved by A. Nakagawa et al. in 1. The non latch up design concept was filed for US patents. 1. To test the lack of latch up, the prototype 1. V IGBTs were directly connected without any loads across a 6. V constant voltage source and were switched on for 2. The entire 6. 00. V was dropped across the device and a large short circuit current flowed. The devices successfully withstood this severe condition. This was the first demonstration of so called short circuit withstanding capability in IGBTs. Non latch up IGBT operation was ensured, for the first time, for the entire device operation range. 1. In this sense, the non latch up IGBT proposed by Hans W. Becke and Carl F. Wheatley was realized by A. Nakagawa et al. in 1. Products of non latch up IGBTs were first commercialized by Toshiba in 1. Once the non latch up capability was achieved in IGBTs, it was found that IGBTs exhibited very rugged and a very large safe operating area. It was demonstrated that the product of the operating current density and the collector voltage exceeded the theoretical limit of bipolar transistors, 21. Wcm. 2, and reached 51. Wcm. 2. 21. 9The insulating material is typically made of solid polymers which have issues with degradation. There are developments that use an ion gel to improve manufacturing and reduce the voltage required. 2. Applications and advantageseditThe IGBT combines the simple gate drive characteristics of MOSFETs with the high current and low saturation voltage capability of bipolar transistors. The IGBT combines an isolated gate FET for the control input and a bipolar power transistor as a switch in a single device. The IGBT is used in medium to high power applications like switched mode power supplies, traction motor control and induction heating. Large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amperes with blocking voltages of 6. V. These IGBTs can control loads of hundreds of kilowatts. Comparison with power MOSFETseditAn IGBT features a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices, although, MOSFETS exhibit much lower forward voltage at lower current densities due to the absence of a diode Vf in the IGBTs output BJT. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n drift region must increase and the doping must decrease, resulting in roughly square relationship decrease in forward conduction versus blocking voltage capability of the device. By injecting minority carriers holes from the collector p region into the n drift region during forward conduction, the resistance of the n drift region is considerably reduced. However, this resultant reduction in on state forward voltage comes with several penalties The additional PN junction blocks reverse current flow. This means that unlike a MOSFET, IGBTs cannot conduct in the reverse direction. 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Rhetoric and CompositionPrint version Wikibooks, open books for an open world Copyright 2.Wikimedia Foundation Inc.Getting Rid Of Cracked Heels Naturally Aspirated on this page.Permission is granted to copy, distribute andor modify this document under the terms of the GNU Free Document License, version 1.A copy of this is included in the section entitled GNU Free Document License.Contents.If you save this file to your computer, you can click on these links to go to the appropriate section.The Authors and Editors of this Wiki Book.Please consider adding to the prestige of this text by adding your name to the list below.Barrett, John.Professor of English at Richland College in Dallas, Texas.Barton, Matthew D.HF7/9780739318027.jpg' alt='Henry June Anais Nin Pdf Merge' title='Henry June Anais Nin Pdf Merge' />An assistant professor of English at Saint Cloud State University in Saint Cloud, Minnesota.Cadle, Lanette An assistant professor of English at Missouri State University in Springfield, Missouri.Christenson, Jeremy W.Junior Undergraduate student at Saint Cloud State University.Denman, Traci.Junior Undergraduate student at Saint Cloud State University.Double majoring in Rhetorical and Applied Writing and Psychology, doubling minoring in English and Intercultural Communications.Doberstein, Ben.Graduate Student at St.Cloud State University studying Modernist American Literature.Grayson, Martin The University of Sheffield, retired.Groth, Kelly M., Junior.Undergraduate student at Saint Cloud State University.Majoring in Information Media.Heimermann, Mark.Henry June Anais Nin Pdf Merge' title='Henry June Anais Nin Pdf Merge' />Graduate student at St.Cloud State University.Hennes, Jack Graduate student at Michigan State University, M.A.Rhetoric Writing, St.Cloud State University.Kath, Sarah.Graduate student at St.Cloud State University studying English and Philosophy.Kaye, Deborah.Instructor of English, Director of Professional Development, Los Angeles Valley College.Kirchoff, Jeffrey.Graduate student studying English and researching Graphic Novels at St.Cloud State University.Klint, Karl Russell.Graduate Student at St.Cloud State University in the English RhetComp program.Focus towards hyper text writing and the effect on rhetorical theory.BFA in Creative and Professional Writing from Bemidji State University MN.Koval, Jamie M.Senior at St.Cloud State University majoring in Public Relations and minoring in Rhetorical and Applied Writing.Murphy, Emily E.BFA, Printmaking, Minor English, St.Cloud State University, 1.Currently pursuing a BA in English, Applied and Rhetorical Writing Emphasis, and a BFA in Graphic Design at St.Cloud State University, St.Cloud, MN.Nicholson, Adam Mc.Henry M.A. English, University of Illinois at Springfield.Adjunct instructor, English and Capital Scholars Honors Program, University of Illinois Springfield.Adjunct instructor of English, Lincoln Land Community College.Pickens, Alex Ph.D student studying Rhetoric and Composition at Purdue University.Rasmussen, Stacy.Graduate Student at St.Cloud State University studying to gain a M.A.English with an emphasis in College Teaching.Reimer, Cody J.Graduate Student at St.Cloud State University.Rosalez, Mary.Graduate student at Michigan State University, East Lansing MI, studying Digital Rhetorics.Schaaf, Luke.Graduate Student at St.Cloud State University.Schauble, Bruce.English Department Chair at Punahou School, Honolulu, HISpeich, Brittany Junior at Saint Cloud State University, Double Majoring in Mass Communications and Political Science, Double Minoring in Rhetorical and Applied Writing, and Public Administration.Springer, Jodi.Fifth year student at St.Cloud State University double majoring in Rhetorical and Applied Writing and Theatre with a minor in Music.Tham, Jason.Graduate student at St.Cloud State University studying MA Rhetoric Composition, and MS Mass Communication.Timp Pilon, Michele L.Graduate student studying Rhetoric and Composition at Saint Cloud State University in Saint Cloud, Minnesota.Wolf, Stephanie M.Senior Undergraduate at St.Cloud State University, majoring in Rhetorical and Applied Writing.Worth, Benjamin.Professor, English, Bluegrass Community and Technical College.Assistant Dean, Distance Learning.The Stages of the Writing Process.Overview The Writing Process.Overview.The writing process is complicated, and often seems loosely defined.According to Websters, writing is the way you use written words to express your ideas or opinions.Although we may think of it as little more than arranging letters and words on a page, a few moments reflection reveals that it is much more than that.On the one hand, writing is an art we dont say Shakespeares language is correct but rather that it is beautiful.On the other hand, writing is a science we want the instructions that came with our Blu Ray player to be accurate, precise, and easy to understand.Then there is the matter of what makes writing good writing.Although we might say that both an instruction manual and a play are well written, we appreciate them for different reasons.A play written in the clear, unambiguous language of an instruction manual would not be a hit on Broadway.In other words, writing must be judged according to its context what is its purpose and audience Finally, even readers with a great deal in common may not agree about the quality of any particular text, just as peoples opinions differ about which bands are really great.We really dont know why people have such preferences and cant make accurate predictions about what they will like or dislike.Simply put, writing isnt simple.If writing is so complicated and mysterious, can it be taughtSince Aristotle, great teachers have taught complex processes to their students by breaking them into smaller, more understandable processes.Aristotle thought that effective communication skills, like good math skills, can be learned and taught.Math teachers dont teach trigonometry to their elementary students instead, they begin with addition and subtraction.Everything else builds on those simple processes.No one is born a mathematician.Similarly, while luck certainly plays a role in any successful writers career, successful writers or speakers are not just born into the role and everyone else is not just fated to flunk English.You can learn to write with substance and style.It takes work, but it is within your power.You have already taken the first step.Most of what we know about writing is also true of speaking.Aristotle wrote a famous treatise on the subject of effective communication called The Rhetoric.This book is meant for speakers however, teachers and students also have long used it to polish their writing.The Rhetoric is still widely read and applied today by people desiring to learn how to speak and write more convincingly to an audience.Your first year composition course may even have the word rhetoric or rhetorical as part of its title.Aristotle taught us that rhetoric isnt just about winning arguments.Instead, rhetoric is the ability to determine all the available means of persuasion at our disposal.Ultimately, its up to you to guess the best course of action, but rhetoric helps you make this a more educated guess.Compared to speaking, writing is a much more recent phenomenon, and for many centuries it was assumed that the best way to learn to write well was either to pray, entreat the muses, or carefully imitate writings that were already considered great.Eventually, as more people wanted to write, teachers created rules to help them write correctly.Unfortunately, this heavy emphasis on correctness and writing with a narrow set of rules did little to improve student writing.Simply knowing how to write grammatically correct prose is important, but it is not enough, by itself, to make writing effective or persuasive.Indeed, too much attention to correctness can result in unintentionally rigid or even comical writing.Legend has it that Winston Churchill grew so irritated at pedants telling him not to end his sentences with prepositions that he said to one of them, Madame, that is a rule up with which I shall not put.Since the 1. 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